DocumentCode
2906166
Title
High Q embedded inductors in silicon for RF applications
Author
Sridharan, Sharmila ; Grande, William ; Mukund, P.R.
Author_Institution
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
fYear
2002
fDate
25-28 Sept. 2002
Firstpage
346
Lastpage
349
Abstract
The quality of integrated inductors plays a crucial part in RF IC design. Due to the losses in parasitics associated with vias and substrate coupling, the performance has been limited in spiral inductors that are typically fabricated in the top metal layer in CMOS technology. In this paper, we demonstrate the feasibility of planar embedded inductors that improve the quality factor significantly. Results show that the Q factor can easily be doubled using this novel technology.
Keywords
CMOS integrated circuits; Q-factor; circuit simulation; inductors; integrated circuit design; integrated circuit modelling; losses; radiofrequency integrated circuits; CMOS technology high Q embedded inductors; CMOS top metal layers; Q factor; RF IC design; Si; integrated inductor quality; planar embedded inductors; spiral inductor performance limitation; vias/substrate coupling parasitic losses; CMOS technology; Circuit noise; Conductivity; Inductors; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC/SOC Conference, 2002. 15th Annual IEEE International
Print_ISBN
0-7803-7494-0
Type
conf
DOI
10.1109/ASIC.2002.1158083
Filename
1158083
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