Inductive ESD Protection For Narrow Band and Ultra-Wideband CMOS Low Noise Amplifiers

Author

Wang, Yanjie ; Ho, Anthony ; Iniewski, Kris ; Gaudet, Vincent

Author_Institution

Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta.

fYear

2007

fDate

27-30 May 2007

Firstpage

3920

Lastpage

3923

Abstract

A novel inductive electrostatic discharge (ESD) protection methodology for narrow-band (NB) and ultra-wideband (UWB) low noise amplifiers (LNA) is presented. Spectre post-layout simulations in a TSMC 0.18mum CMOS process show that the proposed primary-secondary inductive ESD protection can handle 4kV ESD stress. The proposed UWB LNA achieves a flat gain bandwidth of 2.7 GHz to 9 GHz, a power gain of 10 dB, a minimum noise figure of 3.2 dB and a total power dissipation of 6.6 mW from a 1.2 V supply.

Keywords

CMOS analogue integrated circuits; electrostatic discharge; low noise amplifiers; ultra wideband technology; 0.18 micron; 1.2 V; 10 dB; 2.7 to 9 GHz; 3.2 dB; 4 kV; 6.6 mW; ESD stress; Spectre post-layout simulations; electrostatic discharge; inductive ESD protection; narrow band amplifiers; ultra-wideband CMOS low noise amplifiers; Bandwidth; CMOS process; Electrostatic discharge; Gain; Low-noise amplifiers; Narrowband; Niobium; Protection; Stress; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.378657

Filename

4253539