Title :
Optically pumped GaInNAs-DFB lasers in the 1.1 μm range grown by ECR-MBE
Author :
Reinhardt, M. ; Fischer, M. ; Forchel, A.
Author_Institution :
Dept. of Tech. Phys., Wurzburg Univ., Germany
Abstract :
We report on the growth, fabrication and characterization of index coupled 1st order DFB lasers on GaInNAs. A good quaternary GaInNAs layer quality could be achieved by using solid source molecular beam epitaxy and an electron cyclotron resonance source for nitrogen generation. GaInNAs QW´s embedded in a waveguide laser structure were pumped optically. The evanescent field of the laser mode couples strongly to the effective refractive index modulation of a DFB grating on top of the ridge waveguide. Monomode emission peaks depending on the grating period are obtained at room temperature
Keywords :
III-V semiconductors; cyclotron resonance; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; optical fabrication; optical pumping; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.1 mum; DFB grating; ECR MBE; GaInNAs; GaInNAs QW; effective refractive index modulation; electron cyclotron resonance source; evanescent field; good quaternary GaInNAs layer quality; grating period; index coupled 1st order DFB lasers; laser mode; monomode emission peaks; nitrogen generation; optical fabrication; optically pumped; optically pumped GaInNAs DFB lasers; ridge waveguide; room temperature; semiconductor growth; solid source molecular beam epitaxy; waveguide laser structure; Laser excitation; Laser modes; Optical coupling; Optical pumping; Optical refraction; Optical surface waves; Optical variables control; Optical waveguides; Pump lasers; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773629
