Proton irradiation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes

Author

Harris, Richard D. ; Farr, William H. ; Becker, Heidi N.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

396

Lastpage

399

Abstract

Degradation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Substantial changes in the dark I-V characteristics as well as increases in the dark count rate are observed after irradiation. There are no systematic changes in photon count rate observed or in the amount of after-pulsing. The devices are rendered non-operational following a fluence of 8.1×10¹⁰ 50-Mev protons/cm² for room temperature operation.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; proton effects; Geiger-mode avalanche photodiodes; InGaAsP-InP; dark I-V characteristics; dark count rate; photon count rate; proton irradiation; temperature 293 K to 298 K; Indium gallium arsenide; Photonics; Protons; Radiation effects; Semiconductor device measurement; Temperature measurement; Voltage measurement; Geiger-mode; avalanche photodiode; optical communications; proton irradiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994684

Filename

5994684