• DocumentCode
    2907161
  • Title

    Properties of solution TMITM as an OMVPE source

  • Author

    Ravetz, M.S. ; Smith, L.M. ; Rushworth, S.A. ; Leese, A.B. ; Kanjolia, R. ; Davies, J.I. ; Blunt, R.T.

  • Author_Institution
    Epichem Ltd., Bromborough, UK
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    Solid trimethylindium (TMI) is the precursor of choice for the vast majority of MOVPE applications. However consistent pick up has been a problem under normal operating conditions. Epichem´s solutions to this problem have included solution TMITM (TMI suspended in a high boiling point amine adducted to TMI) and dual reverse flow bubblers of solid TMI. A detailed investigation of solution TMITM is being continued at Epichem in order to understand the chemical and physical properties of this indium source. Results have proved solution TMI to have a more consistent `pick up´ than any alternative method and it has been identified as the best precursor for low oxygen applications
  • Keywords
    III-V semiconductors; MOCVD; indium compounds; organometallic compounds; semiconductor growth; vapour phase epitaxial growth; InP; OMVPE source; chemical properties; dual reverse flow bubblers; high boiling point amine; indium source; low oxygen applications; physical properties; pick up; solution TMI; trimethylindium; Atmosphere; Chemical analysis; Dynamic equilibrium; Glass; Monitoring; Nitrogen; Solids; Streaming media; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
  • Conference_Location
    Davos
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-5562-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1999.773632
  • Filename
    773632