DocumentCode
2907161
Title
Properties of solution TMITM as an OMVPE source
Author
Ravetz, M.S. ; Smith, L.M. ; Rushworth, S.A. ; Leese, A.B. ; Kanjolia, R. ; Davies, J.I. ; Blunt, R.T.
Author_Institution
Epichem Ltd., Bromborough, UK
fYear
1999
fDate
1999
Firstpage
51
Lastpage
54
Abstract
Solid trimethylindium (TMI) is the precursor of choice for the vast majority of MOVPE applications. However consistent pick up has been a problem under normal operating conditions. Epichem´s solutions to this problem have included solution TMITM (TMI suspended in a high boiling point amine adducted to TMI) and dual reverse flow bubblers of solid TMI. A detailed investigation of solution TMITM is being continued at Epichem in order to understand the chemical and physical properties of this indium source. Results have proved solution TMI to have a more consistent `pick up´ than any alternative method and it has been identified as the best precursor for low oxygen applications
Keywords
III-V semiconductors; MOCVD; indium compounds; organometallic compounds; semiconductor growth; vapour phase epitaxial growth; InP; OMVPE source; chemical properties; dual reverse flow bubblers; high boiling point amine; indium source; low oxygen applications; physical properties; pick up; solution TMI; trimethylindium; Atmosphere; Chemical analysis; Dynamic equilibrium; Glass; Monitoring; Nitrogen; Solids; Streaming media; Temperature control;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773632
Filename
773632
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