• DocumentCode
    2907190
  • Title

    A simple method for optocouplers selection in the frame of space applications

  • Author

    Peyre, D. ; Binois, C. ; Mendenhall, M.H. ; Weller, R.A. ; Mangeret, R. ; Salvaterra, G. ; Montay, G. ; Beutier, T. ; Beaumel, M. ; Sorensen, R. Harboe ; Poivey, Ch

  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    400
  • Lastpage
    407
  • Abstract
    Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode´s degradations can be predicted and only depend on the initial minority carrier lifetime τrr0 and not the technology.
  • Keywords
    aerospace instrumentation; carrier lifetime; optical couplers; photodiodes; TID irradiation; diode degradations; electron volt energy 60 MeV to 200 MeV; minority carrier lifetime; optocoupler selection; proton irradiations; space applications; Degradation; Energy loss; Protons; Radiation effects; Silicon; Transistors; CTR; GEANT4; NIEL; Optocouplers; minority carriers lifetime; protons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
  • Conference_Location
    Bruges
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0492-5
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2009.5994685
  • Filename
    5994685