• DocumentCode
    2907285
  • Title

    A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences

  • Author

    Mekki, J. ; Moll, M. ; Fahrer, M. ; Glaser, M. ; Dusseau, L.

  • Author_Institution
    CERN, Geneva, Switzerland
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    433
  • Lastpage
    439
  • Abstract
    In this work the effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of unirradiated and irradiated diodes up to 6.3×1015 neq/cm2 have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation.
  • Keywords
    elemental semiconductors; nuclear electronics; p-i-n diodes; radiation hardening (electronics); radiation monitoring; semiconductor device measurement; silicon; silicon radiation detectors; Si; current-voltage characteristics; irradiated diode; radiation damage; radiation monitoring sensor; silicon p-i-n diode response prediction; silicon-bulk properties; unirradiated diode; Conductivity; Current measurement; P-i-n diodes; Silicon; Temperature measurement; Voltage measurement; accelerators; p-i-n diodes; particle beams; radiation damage; radiation monitoring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
  • Conference_Location
    Bruges
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0492-5
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2009.5994691
  • Filename
    5994691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2907285