Controlled growth variation for the detuning of AlGaInP-based microcavity light emitting diodes

Author

Royo, P. ; Ilegems, M. ; Moser, M. ; Hövel, R. ; Schweizer, H.P. ; Gulden, K.H.

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1999

fDate

1999

Firstpage

111

Lastpage

114

Abstract

Visible top emitting microcavity light emitting diodes have been fabricated. The structure consists of two AlGaAs-AlAs Bragg reflectors surrounding an AlGaInP cavity with three GaInP quantum wells. The extraction efficiency of these structures can be maximized optimising the detuning between the quantum well emission and the cavity mode wavelength. We have grown a structure with parabolic profiles of thickness for the reflector layers only: the cavity mode wavelength was continuously shifted by 60 nm over the wafer. We measured a maximum of external quantum efficiency of 1.2% corresponding to a detuning of -12 nm in good agreement with analytical simulations. This result enabled us to estimate an internal quantum efficiency of 50% at a current density of 20 A/cm²

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; micro-optics; optical fabrication; optical tuning; semiconductor quantum wells; AlGaAs-AlAs; AlGaAs-AlAs Bragg reflectors; AlGaInP cavity; AlGaInP-based microcavity light emitting diode detuning; GaInP; GaInP quantum wells; analytical simulations; cavity mode wavelength; continuously shifted wavelength; controlled growth variation; current density; detuning; external quantum efficiency; extraction efficiency; internal quantum efficiency; parabolic profiles; quantum well emission; reflector layers; visible top emitting microcavity light emitting diode fabrication; Analytical models; Current density; Gain measurement; Light emitting diodes; Light sources; Lighting control; Microcavities; Position measurement; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773647

Filename

773647