DocumentCode :
2907671
Title :
Sensitive volume and triggering criteria of SEB in classic planar VDMOS
Author :
Luu, A. ; Austin, P. ; Miller, F. ; Buard, N. ; Carrière, T. ; Poirot, P. ; Gaillard, R. ; Bafleur, M. ; Sarrabayrouse, G.
Author_Institution :
LAAS-CNRS, France
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
552
Lastpage :
558
Abstract :
This paper presents 2D numerical simulation results allowing to define the sensitive volume and triggering criteria of SEB for VDMOS of classic planar-type technology. The results analysis permits besides to better understand the SEB mechanism.
Keywords :
MOSFET; numerical analysis; 2D numerical simulation; SEB mechanism; classic planar VDMOS; classic planar-type technology; sensitive volume; triggering criteria; Electric fields; Epitaxial growth; Epitaxial layers; MOSFETs; Semiconductor process modeling; Space charge; SEB; TCAD simulations; power MOSFETs; sensitive volume; triggering criteria;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2009.5994713
Filename :
5994713
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2907671
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