Title :
Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases
Author :
Sawdai, D. ; Zhang, X. ; Cui, D. ; Pavlidis, D. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
For the first time, the effect of base thickness and parasitic collector resistance on InP-based PNP HBTs was determined experimentally. HBTs with 350-Å and 900-Å base layers and self-aligned collector contacts demonstrated DC gain of 21.3 and 5.9, f T of 18.6 and 8.5 GHz, and fmax of 27.3 and 20.8 GHz, respectively. This is the highest fT reported for any InP-based PNP HBT. Analysis of these HBTs demonstrated that recombination of holes in the neutral base limited the DC gain, and hole transit across the base was the most significant component of τec. In addition, comparison of HBTs with and without self-aligned collectors demonstrated that collector series resistance had a minor but noticeable impact on fT as well as the gain and power-added efficiency at 8 GHz
Keywords :
III-V semiconductors; aluminium compounds; electrical resistivity; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device measurement; 20.8 GHz; 350 A; 8 GHz; 8.5 GHz; 900 A; DC gain; InAlAs-InGaAs-InP; InP-based PNP HBTs; base thickness; collector series resistance; fully self-aligned InAlAs/InGaAs PNP HBTs; hole recombination; hole transit; parasitic collector resistance; power-added efficiency; self-aligned collector contacts; thin bases; Contact resistance; Electric resistance; Etching; Fabrication; Gold; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Metallization; Power generation;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773665
