Multiple micro-cavity laser with λ/4-wide deep grooves buried with benzocyclobutene

Author

Raj, Mothi Madhan ; Toyoshima, Shunsuke ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1999

fDate

1999

Firstpage

207

Lastpage

210

Abstract

Multiple micro-cavity (MMC) lasers, which consist of λ/4-wide deep grooves buried with benzocyclobutene (BCB) polymer, were realized by the CH₄/H₂-RIE dry etching process. Threshold current as low as 30 mA was obtained at 200 K for the micro-cavity length 5.1 μm (groove width 183 nm, pitch Λ=5.3 μm, total cavity length L=300 μm, stripe width W_s=5 μm). A stable single-wavelength operation for a wide temperature range (100-200 K) was obtained with the temperature coefficient 0.06 nm/deg. The room temperature operation of an MMC laser consisting of 3λ/4-BCB buried grooves (=0.70 μm) was also obtained with threshold current as low as 18 mA for the total cavity length of 200 μm (Λ=20=μm, 10 elements, W_s=5 μm), and the effective reflectivity of the MMC structure was estimated to be 94%

Keywords

microcavity lasers; polymers; reflectivity; semiconductor lasers; sputter etching; 100 to 200 K; 18 mA; 183 nm; 20 mum; 200 K; 200 mum; 293 K; 30 mA; 300 mum; 5 mum; 5.1 mum; 5.3 mum; benzocyclobutene buried deep grooves; benzocyclobutene polymer; dry etching; multiple microcavity laser; reactive ion etching; reflectivity; room temperature operation; stable single-wavelength operation; temperature coefficient; threshold current; Diffraction; Dry etching; Laser modes; Laser theory; Reflectivity; Ring lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773670

Filename

773670