Temperature-dependent performance of 1.55 μm vertical-cavity lasers with InGaAsP/InP bottom mirror

Author

Salomonsson, F. ; Mogg, S. ; Rapp, S. ; Bentell, J. ; Sagnes, I. ; Raj, R. ; Streubel, K. ; Hammar, M.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

fYear

1999

fDate

1999

Firstpage

223

Lastpage

226

Abstract

We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17°C and 101°C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible

Keywords

III-V semiconductors; distributed Bragg reflector lasers; finite element analysis; gallium arsenide; gallium compounds; heat conduction; indium compounds; laser mirrors; semiconductor lasers; surface emitting lasers; 1.55 mum; 101 degC; 17 degC; InGaAsP; InGaAsP/InP bottom mirror; InP; continuous wave condition; epitaxially integrated InP distributed Bragg reflector; heat conductivity; heat sink; heat transfer problem; high temperature performance; mounting configurations; operating temperature; pulsed condition; self-heating; temperature-dependent performance; top-side-down mounting; two-dimensional finite element analysis; vertical-cavity lasers; Conductivity; Distributed Bragg reflectors; Finite element methods; Heat transfer; Indium phosphide; Mirrors; Optical pulses; Performance analysis; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773675

Filename

773675