Uniformity of Fe-diffused semi-insulating InP wafers

Author

Fornari, R. ; Görög, T. ; Jimenez, J. ; De la Puente, E. ; Grant, I. ; Brozel, M. ; Nicholls, M.

Author_Institution

Istituto MASPEC, CNR, Parma, Italy

fYear

1999

fDate

1999

Firstpage

259

Lastpage

262

Abstract

A study on the uniformity of Fe-diffused semi-insulating InP wafers is presented. The electrical characterisation showed that after the diffusion annealing the wafers became semi-insulating, with resistivities generally above 10⁸ Ω cm and mobilities in the range 3000-4000 cm²/Vs. PL and resistivity mapping showed that the short range uniformity is excellent but that sometimes the wafers exhibit long range gradients of resistivity and luminescence intensity. The gradients are believed to be associated with temperature gradients inside the annealing furnace

Keywords

III-V semiconductors; annealing; carrier mobility; diffusion; electrical resistivity; indium compounds; iron; photoluminescence; InP:Fe; carrier mobility; diffusion annealing; luminescence intensity; photoluminescence; resistivity; semi-insulating InP wafers; short range uniformity; wafer uniformity; Annealing; Conductivity; Furnaces; Indium phosphide; Iron; Luminescence; Mass spectroscopy; Performance evaluation; Pollution measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773684

Filename

773684