0.1-μm InAlP/InAlAs/InGaAs/InP HEMTs with improved breakdown voltages

Author

Yamane, Yasuro ; Yokoyama, Haruki ; Makimura, Takashi ; Kobayashi, Takashi ; Ishii, Yasunobu

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

fYear

1999

fDate

1999

Firstpage

311

Lastpage

314

Abstract

InAlP/InAlAs/InGaAs/InP HEMTs that offer improved breakdown voltages and reduced gate leak currents are investigated. The InAlP-layer has a larger etching selectivity compared to InAlAs and InGaAs, which is very effective in Vth control. Moreover, it has a larger Eg and Schottky barrier values than InAlAs and InP. These characteristics are suitable for the HEMT´s etch stop layer. A fabricated 0.1-μm HEMT exhibits 8.1 V breakdown voltage and 1-nA/10-μm gate leak current without any performance tradeoff. These results are enough to expand the application area of InP-based HEMTs

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; etching; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; semiconductor device breakdown; 0.1 micron; 8.1 V; InAlP-InAlAs-InGaAs-InP; InP-based HEMTs; Schottky barrier values; Vth control; breakdown voltages; etch stop layer; etching selectivity; gate leak current reduction; threshold voltage control; Breakdown voltage; Doping; Etching; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Schottky barriers; Spine;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773697

Filename

773697