Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module

Author

Bitter, Martin ; Bauknecht, Raimond ; Hunziker, Werner ; Melchior, Hans

Author_Institution

Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1999

fDate

1999

Firstpage

381

Lastpage

384

Abstract

A fully packaged 40 Gb/s optical receiver module based on monolithic integration of pin photodiodes and single-heterojunction bipolar transistors (HBT) in the InP/InGaAs material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly open eyes at a data-rate of 40 Gb/s and a wavelength of 1550 nm

Keywords

III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1550 nm; 40 Gbit/s; InP; InP/InGaAs PIN/HBT optical receiver module; conversion gain; electrical broadband mounting; heterojunction bipolar transistor; monolithic integration; packaging; pin photodiode; Bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated optics; Monolithic integrated circuits; Optical materials; Optical receivers; PIN photodiodes; Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773713

Filename

773713