Title :
A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells
Author :
Dries, J. Christopher ; Gokhale, Milind R. ; Forrest, Stephen R. ; Olsen, Gregory H.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We report an avalanche photodiode structure for use at wavelengths as long as 2.1 μm. Light is absorbed in a 100 period structure consisting of In0.83Ga0.17As quantum wells strain-compensated by In0.83Ga0.17P barrier layers. Photogenerated electrons are injected into a high electric field In0.52Al0.48As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of ~5 nA and responsivities of 45 A/W at a wavelength of 1.93 μm are observed
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; quantum well devices; 2.0 micron; In0.52Al0.48As; InGaAs quantum well; SACM APD; avalanche multiplication; cutoff wavelength; dark current; ionization rate; period structure; photodetector; responsivity; separate absorption charge and multiplication layer avalanche photodiode; strain compensation; Absorption; Avalanche photodiodes; Capacitive sensors; Detectors; Electrons; Indium gallium arsenide; Indium phosphide; Optoelectronic and photonic sensors; Quantum well devices; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773717
