Title :
InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model
Author :
Blayac, S. ; Riet, M. ; Benchimol, J.L. ; Abboun, M. ; Aniel, F. ; Berdaguer, P. ; Duchenois, A.M. ; Konczykowska, A. ; Godin, J.
Author_Institution :
Groupement d´´Interet Econ., OPTO+, Marcoussis, France
Abstract :
InP/InGaAs DHBT technology for 40 Gb/s ICs is first presented. For these circuit applications, a sufficient breakdown voltage (>5 V), a static gain around 50, cutoff frequencies (fT) and maximum oscillation frequencies (fmax) greater than 100 GHz are needed. High performance InP/InGaAs DHBT grown by chemical beam epitaxy (CBE) are reported with 125 GHz fT, 128 GHz fmax and a gain of 50 at a current density of 1×105 A/cm2. Devices geometry optimisation is performed using a geometric model based on a set of analytical equations. This tool allows not only technological optimisation but also function-adapted individual sizing of the devices in the circuits
Keywords :
III-V semiconductors; bipolar MIMIC; circuit CAD; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device models; very high speed integrated circuits; 125 GHz; 128 GHz; 40 Gbit/s; CAD geometric model; CBE; ICs; InP HBT; InP-InGaAs; InP/InGaAs DHBT technology; analytical equations; breakdown voltage; chemical beam epitaxy; circuit applications; current density; cutoff frequencies; devices geometry optimisation; fabrication; function-adapted individual sizing; gain; geometric model; maximum oscillation frequencies; self-aligned technology; static gain; technological optimisation; Chemicals; Circuits; Cutoff frequency; DH-HEMTs; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773738
