Title :
Microarray selective epitaxy (MASE) for integrated photonic devices
Author :
Kudo, Koji ; Nakazaki, Tadashi ; Yamaguchi, Masayuki
Author_Institution :
Optoelectron. & High Frequency Device Res. Lab., NEC Corp., Ibaraki, Japan
Abstract :
We developed a novel technique, called microarray selective epitaxy (MASE), for selectively growing extremely small PICs. MASE can form densely arrayed (pitch<10 μm) multiple-quantum-well (MQW) waveguides, without the need for semiconductor etching, and simultaneously control the bandgap-wavelength of each MQW in the over-300-nm wavelength range
Keywords :
III-V semiconductors; MOCVD; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical fabrication; optical waveguides; quantum well devices; vapour phase epitaxial growth; InGaAsP; MASE; MQW; bandgap-wavelength; extremely small PICs; integrated photonic devices; microarray selective epitaxy; multiple-quantum-well waveguides; photonic integrated circuits; Epitaxial growth; Etching; Optical add-drop multiplexers; Optical devices; Optical waveguides; Photonic integrated circuits; Quantum well devices; Semiconductor waveguides; Temperature measurement; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773752
