• DocumentCode
    2909313
  • Title

    Spurious resonance free bulk acoustic wave resonators

  • Author

    Kaitila, J. ; Ylilammi, M. ; Ella, Juha ; Aigner, R.

  • Author_Institution
    Infineon Technol. AG, Munchen, Germany
  • Volume
    1
  • fYear
    2003
  • fDate
    5-8 Oct. 2003
  • Firstpage
    84
  • Abstract
    In this paper a device structure eliminating the spurious modes arising from lateral standing Lamb waves is presented. The operating principle behind the device is described with the use of a simple model. Experimental results of ZnO and AlN based resonators in SMR configuration are given. Laser interferometer measurements are presented that confirm applicability of the idea.
  • Keywords
    II-VI semiconductors; III-V semiconductors; aluminium compounds; bulk acoustic wave devices; light interferometry; surface acoustic wave resonators; surface acoustic waves; wide band gap semiconductors; zinc compounds; AlN; AlN based resonators; ZnO; ZnO based resonators; laser interferometer measurements; resonance free bulk acoustic wave resonator; spurious free resonator; standing Lamb waves; Acoustic waves; Band pass filters; Cutoff frequency; Dispersion; Information technology; Mobile handsets; Resonance; Resonator filters; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics, 2003 IEEE Symposium on
  • Print_ISBN
    0-7803-7922-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2003.1293361
  • Filename
    1293361