Title :
Spurious resonance free bulk acoustic wave resonators
Author :
Kaitila, J. ; Ylilammi, M. ; Ella, Juha ; Aigner, R.
Author_Institution :
Infineon Technol. AG, Munchen, Germany
Abstract :
In this paper a device structure eliminating the spurious modes arising from lateral standing Lamb waves is presented. The operating principle behind the device is described with the use of a simple model. Experimental results of ZnO and AlN based resonators in SMR configuration are given. Laser interferometer measurements are presented that confirm applicability of the idea.
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; bulk acoustic wave devices; light interferometry; surface acoustic wave resonators; surface acoustic waves; wide band gap semiconductors; zinc compounds; AlN; AlN based resonators; ZnO; ZnO based resonators; laser interferometer measurements; resonance free bulk acoustic wave resonator; spurious free resonator; standing Lamb waves; Acoustic waves; Band pass filters; Cutoff frequency; Dispersion; Information technology; Mobile handsets; Resonance; Resonator filters; Substrates; Zinc oxide;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293361
