A method of incorporating wet-oxidized III-V semiconductor layers into indium phosphide based lasers and amplifiers

Author

Koley, Bikash ; Johnson, F.G. ; Saini, Simarjeet S. ; Dagenais, Mario

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD

fYear

1999

fDate

1999

Firstpage

20

Abstract

We have demonstrated a method of efficient wet oxidation for use in device fabrication using material system lattice-matched to indium phosphide. It was found that the oxidation of a strain compensated InAs/AlAs super-lattice grown on InP proceeded much faster than lattice matched InAlAs. This method has been used for current confinement in InP based edge emitting stripe lasers. The same wet oxidation process is also well suited for long wavelength VCSEL application

Keywords

III-V semiconductors; indium compounds; oxidation; semiconductor lasers; III-V semiconductor; InAs-GaAs; InP; VCSEL; amplifier; current confinement; edge emitting stripe laser; indium phosphide device fabrication; lattice matched layer; strain compensated superlattice; wet oxidation; Aluminum; Capacitive sensors; III-V semiconductor materials; Indium phosphide; Laser theory; Lattices; Oxidation; Semiconductor lasers; Substrates; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773771

Filename

773771