DocumentCode :
2909447
Title :
Application of Novel Cell Selection Method for PoRAM Sensing
Author :
Kim, Jung-ha ; Choi, Seung-hyeok ; Lee, Sang-Sun
Author_Institution :
Hanyang Univ., Seoul
fYear :
2007
fDate :
26-28 Sept. 2007
Firstpage :
317
Lastpage :
320
Abstract :
A polymer random access memory (PoRAM) is a next-generation nonvolatile memory device possessing two stable states whose resistance differs by a factor of more than 100 times. A unit memory 1R cell structure can be created by adding a polymer material into the metal cross-point of the top and bottom electrodes. This memory has a symmetric structure that makes a cell-array possible. However, a cross-point polymer memory cell is not completely isolated because of high-integration, which makes it difficult to sense and also creates leakage current problems. This paper proposes a new decoding and sensing method compensate for these problems. This method connects an MOS-switch at the input port of the cell-array to make a current path. The MOS-switch also controls selection of the sensing and the write/erase mode.
Keywords :
leakage currents; random-access storage; semiconductor switches; MOS-switch; cross-point polymer memory cell; leakage current; memory cell selection; metal cross-point; nonvolatile memory device; polymer random access memory; resistance difference; write-erase mode; Decoding; Electrodes; Energy consumption; Ferroelectric films; Inorganic materials; Low voltage; Magnetic materials; Nonvolatile memory; Polymers; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-0797-2
Electronic_ISBN :
978-1-4244-0797-2
Type :
conf
DOI :
10.1109/ISICIR.2007.4441862
Filename :
4441862
Link To Document :
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