Application of Novel Cell Selection Method for PoRAM Sensing

A polymer random access memory (PoRAM) is a next-generation nonvolatile memory device possessing two stable states whose resistance differs by a factor of more than 100 times. A unit memory 1R cell structure can be created by adding a polymer material into the metal cross-point of the top and bottom electrodes. This memory has a symmetric structure that makes a cell-array possible. However, a cross-point polymer memory cell is not completely isolated because of high-integration, which makes it difficult to sense and also creates leakage current problems. This paper proposes a new decoding and sensing method compensate for these problems. This method connects an MOS-switch at the input port of the cell-array to make a current path. The MOS-switch also controls selection of the sensing and the write/erase mode.