• DocumentCode
    2909673
  • Title

    Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter

  • Author

    Yang, C.-M. ; Uehara, K. ; Kim, S.-K. ; Kameda, S. ; Nakase, H. ; Tsubouchi, K.

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
  • Volume
    1
  • fYear
    2003
  • fDate
    5-8 Oct. 2003
  • Firstpage
    170
  • Abstract
    We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1 μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5 GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100 MHz, which is evaluated from butterworth-van dyke (BVD) equivalent circuit model of FBAR.
  • Keywords
    III-V semiconductors; MOCVD; acoustic resonator filters; aluminium compounds; band-pass filters; crystal orientation; frequency division multiplexing; semiconductor thin films; wide band gap semiconductors; wireless LAN; 1 micron; 1050 degC; 5 GHz; AlN; MOCVD; band pass filter; butterworth-van dyke equivalent circuit model; c-axis oriented AlN film; electromechanical coupling coefficient; film bulk acoustic resonator filter; full-width at half-maximum; metal organic chemical vapour deposition; orthogonal FDM; orthogonal frequency division multiplexing; wireless LAN system; wireless local area network system; Aluminum nitride; Band pass filters; Bandwidth; Film bulk acoustic resonators; Levee; MOCVD; OFDM; Substrates; Temperature; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics, 2003 IEEE Symposium on
  • Print_ISBN
    0-7803-7922-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2003.1293381
  • Filename
    1293381