Title :
Super low-distortion and high power hetero GaAs MESFETs with asymmetrical LDD structure
Author :
Otobe, K. ; Nakata, K. ; Nakajima, S.
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
We have developed hetero GaAs MESFET with an asymmetrical Lightly Doped Drain (LDD) structure to improve the IM3 for base station applications of digital wireless systems. The IM3 at the high and low back-off region was improved simultaneously by optimizing an LDD region. The key points to improve the IM3 are suppressing the impact ionization phenomenon, increasing the gate-drain breakdown voltage and decreasing the on-resistance. The IP3 of 60.5 dBm at high back-off was obtained for 10 W-class FET in class-A operation. A Linearity Figure-of-Merit (L.F.O.M.) of 70.1 was recorded. The PAE of 39.5% at the IM3 of -35 dBc (at low back-off) was obtained for 20 W push-pull FET in class-AB operation.
Keywords :
III-V semiconductors; gallium arsenide; impact ionisation; intermodulation distortion; power MESFET; semiconductor device breakdown; 10 W; 20 W; 39.5 percent; GaAs; IM3; asymmetrical LDD structure; base station; breakdown voltage; class-A operation; class-AB operation; digital wireless system; impact ionization; intermodulation distortion; linearity figure of merit; on-resistance; power hetero GaAs MESFET; push-pull FET; Base stations; Degradation; Electrodes; FETs; Gallium arsenide; Impedance; MESFETs; Power generation; Pulse amplifiers; Voltage;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906293
