Title :
A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology
Author :
Sokolich, M. ; Fields, C. ; Shi, B. ; Brown, Y.K. ; Montes, M. ; Martinez, R. ; Kramer, A.R. ; Thomas, S., III. ; Madhav, M.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
We report a 72.8 GHz fully static frequency divider in AlInAs/InGaAs HBT IC technology. The CML divider operates with a 350 mV logic swing at less than 0 dBm input power up to a maximum clock rate of 63 GHz and requires 86 dBm of input power at the minimum clock rate of 72.8 GHz. Power dissipation per flip-flop is 55 mW with a 3.1 V power supply. To our knowledge this is the highest frequency of operation for a static divider in any technology. The power-delay product of 94 fJ/gate is also the lowest power-delay product for a circuit operating above 50 GHz in any technology. A low power divider on the same substrate operates at 36 GHz with 6.9 mW of dissipated power per flip-flop with a 3.1 V supply. The power delay of 24 fJ/gate is, to our knowledge, the lowest power delay product for a static divider operating above 30 GHz in any technology.
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; current-mode logic; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; 3.1 V; 55 mW; 6.9 mW; 72.8 GHz; AlInAs-InGaAs; AlInAs/InGaAs HBT IC technology; current mode logic; flip-flop; low power design; power dissipation; power-delay product; static frequency divider; Circuits; Clocks; Delay; Flip-flops; Frequency conversion; Heterojunction bipolar transistors; Indium gallium arsenide; Logic; Power dissipation; Power supplies;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906297