Title :
Ultra low power, low noise GaAs up-converter MMIC for a broadband superheterodyne L-band receiver
Author :
Ellinger, F. ; Vogt, R. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Micorwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
The design and the performance of a low power up-converter MMIC fabricated using a commercial 0.6 /spl mu/m GaAs MESFET process is presented. The circuit is designed for a low superheterodyne receiver, which in the RF frequency range from 0.8 GHz to 1.2 GHz. At a low supply voltage of 1.2 V and a low supply current of only 1.7 mA, a conversion gain of 3.6 dB and a state of the art SSB noise figure of 3.1 dB was measured.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC frequency convertors; gallium arsenide; integrated circuit noise; low-power electronics; superheterodyne receivers; 0.6 micron; 0.8 to 1.2 GHz; 1.2 V; 1.7 mA; 3.1 dB; 3.6 dB; GaAs; MESFET circuit; SSB noise figure; broadband superheterodyne L-band receiver; conversion gain; low-power GaAs up-converter MMIC; Amplitude modulation; Circuit noise; Current supplies; Gain; Gallium arsenide; Low voltage; MESFETs; MMICs; Noise figure; Radio frequency;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906302
