DocumentCode :
2911960
Title :
MMIC low-noise amplifiers and applications above 100 GHz
Author :
Lai, R. ; Gaier, T. ; Nishimoto, M. ; Weinreb, S. ; Lee, K. ; Barsky, M. ; Raja, R. ; Sholley, M. ; Barber, G. ; Streit, D.
Author_Institution :
TRW One Space Park, Redondo Beach, CA, USA
fYear :
2000
fDate :
5-8 Nov. 2000
Firstpage :
139
Lastpage :
141
Abstract :
In this paper we will present recent work on low noise amplifiers developed for very high frequencies above 100 GHz. These amplifiers were developed with a unique InP-based HEMT MMIC process. The amplifiers have been developed for both cryogenic and room temperature amplifier applications with state-of-art performance demonstrated from 100 GHz to 215 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; indium compounds; 100 to 215 GHz; InP; InP HEMT; MMIC low-noise amplifier; cryogenic operation; room temperature operation; Acoustic noise; Cutoff frequency; Gain; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Radiofrequency amplifiers; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-5968-2
Type :
conf
DOI :
10.1109/GAAS.2000.906309
Filename :
906309
Link To Document :
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