Power flip-chip assembly for space application using HBT in Ku band

Author

Vendier, O. ; George, S. ; Fraysse, J.-P. ; Rogeaux, E. ; Drevon, C. ; Cazaux, J.-L. ; Floriot, D. ; Caillas-Devignes, N. ; Blanck, H. ; Doser, W. ; Auxemery, P. ; de Ceuninck, W. ; Petersen, R. ; Haese, N. ; Rolland, P.-A.

Author_Institution

Alcatel Espace, Toulouse, France

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

157

Lastpage

159

Abstract

Flip-chip assembly using pure Au-Au thermocompression process have been implemented for use in power HBT. Thermal path optimization has conducted to measure 30% decrease of thermal resistance of flip-chip mounted HBT compared to face up mounted. In best configuration (thermal bump on top of emitter finger) it is anticipated to reach 40% decrease. First demonstration of this technology has been done on HBT single devices. It is shown that no electrical degradation occurred after thermocompression even after an aging of 300 thermal cycle (55/spl deg/C, +125/spl deg/C). Further validation will be done through high power amplifier design, fabrication and test with simulated performances of 2.5 W output power in Ku band, 19 dB linear gain and over 35% power added efficiency.

Keywords

ageing; flip-chip devices; heterojunction bipolar transistors; power bipolar transistors; space vehicle electronics; thermal resistance; -55 to 125 C; 19 dB; 2.5 W; 35 percent; Au-Au; Au-Au thermocompression process; Ku-band; aging; flip-chip assembly; power HBT; power amplifier; space instrumentation; thermal cycling; thermal path optimization; thermal resistance; Aging; Assembly; Electric resistance; Electrical resistance measurement; Fingers; Heterojunction bipolar transistors; High power amplifiers; Thermal conductivity; Thermal degradation; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906313

Filename

906313