Title :
Ka-band planar Gunn oscillators using flip-chip GaAs Gunn diodes fabricated by boron ion implantation
Author :
Yoshida, T. ; Deguchi, T. ; Kawaguchi, K. ; Nakagawa, A.
Author_Institution :
Res. Lab., New Japan Radio Co. Ltd., Saitama, Japan
Abstract :
This paper presents the development of Ka-band planar Gunn oscillators using novel flip-chip GaAs Gunn diodes. These devices demonstrate sufficient RF performance for use in Ka-band communication systems. The flip-chip GaAs Gunn diode is fabricated by Boron (B) ion implantation to simplify fabrication process. The Gunn oscillator generates an output power of 134 mW at 34.5 GHz with DC-to-RF conversion efficiency of 3.9%. An excellent phase noise of -83.7 dBc/Hz at 100 kHz off carrier has been achieved.
Keywords :
Gunn diodes; Gunn oscillators; III-V semiconductors; boron; flip-chip devices; gallium arsenide; ion implantation; millimetre wave oscillators; 134 mW; 3.9 percent; 34.5 GHz; DC-to-RF conversion efficiency; GaAs:B; Ka-band communication system; boron ion implantation; fabrication; flip-chip GaAs Gunn diode; output power; phase noise; planar Gunn oscillator; Boron; Diodes; Fabrication; Gallium arsenide; Gunn devices; Ion implantation; Oscillators; Phase noise; Power generation; Radio frequency;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906315
