DocumentCode
2913582
Title
Characterization and modeling of 4H-SiC power BJTs
Author
Gao, Yuan ; Huang, Alex Q. ; Agarwal, Anant K. ; Krishnaswami, S.
Author_Institution
Semicond. Power Electron. Center (SPEC), North Carolina State Univ., Raleigh, NC
fYear
2005
fDate
6-6 Nov. 2005
Abstract
4H-SiC power BJTs are investigated by experimental measurements and numerical simulations. A number of phenomena that are different from Si BJT are investigated including the Vce offset voltage and collector conductivity modulation. The current gain as a function of collector current density has also been studied. Simulation shows the emitter and base junction interface states plays a key role in limiting the current gain at high current densities
Keywords
current density; power bipolar transistors; semiconductor device models; wide band gap semiconductors; H-SiC power BJT; Vce offset voltage; collector conductivity modulation; collector current density; current gain; numerical simulation; Current density; Electrical resistance measurement; Numerical simulation; Power electronics; Power measurement; Q measurement; Silicon carbide; Temperature; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE
Conference_Location
Raleigh, NC
Print_ISBN
0-7803-9252-3
Type
conf
DOI
10.1109/IECON.2005.1568985
Filename
1568985
Link To Document