A novel design technique for bandwidth enhancement in InGaP HBT broadband amplifier

Author

Gao, Huai ; Chatchaikarn, Aroonchat ; Guan, Huinan ; Yang, Li-wu ; Li, G.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA

Volume

C

fYear

2004

fDate

21-24 Nov. 2004

Firstpage

632

Abstract

A design technique, the cascode amplifier with series RLC peaking, for broadband amplifiers to achieve high gain-bandwidth product is proposed and demonstrated in this paper. Implemented with 27 μm InGaP HBTs, the cascode amplifier with series RLC peaking enhances approximately 200% of the amplifier bandwidth compared with a normal cascode amplifier. The measurement results show that the cascode broadband amplifier with this technique has 7.5 dB small-signal gain over the operating frequency range from 30 kHz to 23 GHz. S₁₁ and S₂₂ ore lower than -10 dB, and S₁₂ is lower than -40 dB.

Keywords

HF amplifiers; III-V semiconductors; UHF amplifiers; VHF amplifiers; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave amplifiers; network synthesis; wideband amplifiers; 27 mum; 30 kHz to 23 GHz; 7.5 dB; InGaP; InGaP HBT broadband amplifier; bandwidth enhancement; cascode amplifier; series RLC peaking; Bandwidth; Broadband amplifiers; Current density; Distributed amplifiers; Energy consumption; Frequency; HEMTs; Heterojunction bipolar transistors; MODFETs; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2004. 2004 IEEE Region 10 Conference

Print_ISBN

0-7803-8560-8

Type

conf

DOI

10.1109/TENCON.2004.1414851

Filename

1414851