Title :
GaN/AlGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency
Author :
Gainer, G.H. ; Kwon, Y.H. ; Lam, J.B. ; Kalashyan, A. ; Song, J.J. ; Choi, S.C. ; Yang, G.M.
Author_Institution :
Center for Laser & Photonics Res., Oklahoma State Univ., Stillwater, OK, USA
Abstract :
Summary form only given. GaN active medium structures are attracting much attention for the development of UV laser diodes (LDs) with emission wavelengths lying below 370 nm. We previously reported a significant reduction of the stimulated emission (SE) threshold in GaN/AlGaN SCHs compared to bulk GaN layers and identified the gain mechanisms. In this study, we investigated the effect of the GaN well thickness, which is a crucial design parameter, on the SE behavior. Built-in internal electric fields (intrinsic to GaN-based structures) reduce the emission efficiency, and this decrease in efficiency is greater for larger GaN well thicknesses. We measured 10 K photoluminescence (PL) spectra of SCH samples with well thicknesses of 3, 5, 9, and 15 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser transitions; photoluminescence; quantum well lasers; stimulated emission; wide band gap semiconductors; 15 nm; 3 nm; 370 nm; 5 nm; 9 nm; GaN active medium structures; GaN well thickness; GaN-AlGaN; GaN/AlGaN SCH UV semiconductor lasers; UV laser diodes; built-in internal electric fields; design parameter; emission efficiency; emission wavelengths; gain mechanisms; lasing efficiency; photoluminescence; stimulated emission threshold; Aluminum gallium nitride; Epitaxial growth; Gallium nitride; Laser theory; Molecular beam epitaxial growth; Optical buffering; Power lasers; Quantum cascade lasers; Semiconductor lasers; Shape;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906694
