DocumentCode
2918157
Title
Optical properties of TiO2 thin films prepared by sol-gel method
Author
Sarah, M.S.P. ; Musa, M.Z. ; Asiah, M.N. ; Rusop, M.
Author_Institution
Solar Cell Lab., FKE, UiTM, Shah Alam, Malaysia
fYear
2010
fDate
11-14 April 2010
Firstpage
365
Lastpage
367
Abstract
Titanium dioxide in the anatase phase has been synthesized by the sol-gel method. Then, the solution was deposited onto glass substrate using spin coating technique. These thin films are then annealed at a temperature ranged from 350°C to 550°C. The optical and topology of the thin film was characterized using UV-VIS and AFM. Based on the readings from UV-VIS spectroscopy, it is found that transmittance properties of TiO2 thin films increased as the annealing temperatures increased. The UV-VIS results were supported by the AFM. From AFM, it can be observed that as the temperature increase the grain size will also increase. The surface topography of thin films becomes more uniform. The roughness of the surface is also increased and the height variation becomes much larger.
Keywords
annealing; atomic force microscopy; grain size; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; surface roughness; surface topography; titanium compounds; ultraviolet spectra; visible spectra; wide band gap semiconductors; AFM; TiO2; UV-VIS spectra; anatase phase; annealing; grain size; sol-gel method; spin coating; surface roughness; surface topography; temperature 350 degC to 550 degC; titanium dioxide thin films; transmittance properties; Annealing; Glass; Optical films; Rough surfaces; Substrates; Surface roughness; Surface topography; Temperature; Titanium; Transistors; sol-gel; titanium dioxide; transmittance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-6629-0
Type
conf
DOI
10.1109/ICEDSA.2010.5503041
Filename
5503041
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