DocumentCode :
2918544
Title :
Determination of the piezoresistivity of microcrystalline silicon-germanium and application to a pressure sensor
Author :
Lenci, S. ; Gonzalez, P. ; De Meyer, K. ; Van Hoof, R. ; Frederickx, D. ; Witvrouw, A.
Author_Institution :
Dipt. di lng. dell´´Inf., Pisa
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
427
Lastpage :
430
Abstract :
This paper reports for the first time the experimentally obtained piezoresistive coefficients of microcrystalline silicon-germanium (mucSiGe), which is proposed as a new structural material for piezoresistive micro-electromechanical systems (MEMS). We measure the resistance variation of several piezoresistors under a uniform and uniaxial stress provided by a four point bending (4 PB) fixture. The stress values are determined both by theory and from finite elements (FE) simulations. FE simulations are done as well to investigate the potential of using mucSiGe for a piezoresistive pressure sensor application.
Keywords :
Ge-Si alloys; finite element analysis; microsensors; piezoresistive devices; pressure sensors; resistors; MEMS; SiGe; finite element simulations; four point bending fixture; microcrystalline silicon-germanium; piezoresistive microelectromechanical systems; piezoresistors; pressure sensor; Electrical resistance measurement; Finite element methods; Fixtures; Germanium silicon alloys; Microelectromechanical systems; Micromechanical devices; Piezoresistance; Piezoresistive devices; Silicon germanium; Stress measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443684
Filename :
4443684
Link To Document :
بازگشت