Oxide charging and memory effects in suspended-gate FET

An original study of the dielectric charging in a suspended gate FET device (SG-FET) and its use for memory applications is reported. Combining a movable conductive gate with the ability to retain charge on top of the dielectric layer of FET device, a MEMS memory device has been produced where the advantages that positive and negative pull-in voltages can be used to charge and discharge the dielectric and the capacitance´s ratio can be used to retain the charge in the dielectric layer with low charge value but with high retention.