• DocumentCode
    2919972
  • Title

    Impact analysis of stochastic transistor aging on current-steering DACs in 32nm CMOS

  • Author

    Vanden Bussche, Simon ; De Wit, Pieter ; Maricau, Elie ; Gielen, Georges

  • Author_Institution
    Dept. Electr. Eng., Katholieke Univ. Leuven, Heverlee, Belgium
  • fYear
    2011
  • fDate
    11-14 Dec. 2011
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    Advanced CMOS technology introduces reliability challenges that are no longer fully resolved at the technology level. This paper studies the impact of transistor degradation at the circuit level. Particular attention is paid to the change in matching characteristics. This mismatch is critical for the performance of a lot of analog circuits such as current-steering DACs. A `design for reliability´ technique using higher-than-nominal supply voltage allows increased performance and lower area usage at the expense of increased degradation. A `Switching-Sequence Post Adjustment´ (SSPA) digital calibration method is used to reduce the area even more, but can also provide a `dynamic resequencing´, which ensures reliable operation of the circuit at all times. A 10-bit DAC is analysed using 32nm data. A degradation-induced accuracy decrease of 0.33 bit, of which 0.21 bit can be compensated using the SSPA algorithm, is observed, yielding a factor 25 area reduction.
  • Keywords
    CMOS analogue integrated circuits; digital-analogue conversion; integrated circuit reliability; transistor circuits; advanced CMOS technology; current-steering DAC; design for reliability technique; digital calibration method; impact analysis; size 32 nm; stochastic transistor aging; switching-sequence post adjustment; transistor degradation; Analog circuits; CMOS integrated circuits; Calibration; Degradation; Reliability engineering; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
  • Conference_Location
    Beirut
  • Print_ISBN
    978-1-4577-1845-8
  • Electronic_ISBN
    978-1-4577-1844-1
  • Type

    conf

  • DOI
    10.1109/ICECS.2011.6122239
  • Filename
    6122239