Title :
Two-parameter model calculations of the proton and pion-induced SEU cross sections
Author :
Tverskoy, M.G. ; Duzellier, Sophie
Author_Institution :
St. Petersburg Nucl. Phys. Inst., Gatchina, Russia
Abstract :
Recent pion-induced SEU experimental data obtained in Los-Alamos and Gatchina were analyzed along with the available proton results for the same devices. The Two-Parameters Model is successful for predicting proton upsets but demonstrates more discrepancy applying to pion results. The reasons for such a behavior are discussed.
Keywords :
meson effects; proton effects; radiation hardening (electronics); semiconductor device models; Two-Parameters Model; pion-induced SEU cross sections; proton-induced SEU cross sections; two-parameter model calculations; Ionization; Mesons; Neutrons; Predictive models; Projectiles; Protons; Random access memory; Resonance; Semiconductor materials; Single event upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159315
