DocumentCode :
2920067
Title :
Recent studies of single-event phenomena in devices using the heavy-ion microbeam at JAERI
Author :
Hirao, T. ; Laird, J.S. ; Mori, H. ; Onoda, S. ; Itoh, H.
Author_Institution :
JAERI, Gunma, Japan
fYear :
2001
fDate :
10-14 Sept. 2001
Firstpage :
418
Lastpage :
422
Abstract :
For the study of basic mechanism of single-event upset, we have developed a transient current measurement system comprising a heavy-ion micro-beam combined with an ultra-fast transient acquisition system. Transient current. waveforms induced by high-energy heavy ion strikes in test structures are reported.
Keywords :
ion beam effects; radiation hardening (electronics); JAERI heavy-ion microbeam; single-event phenomena; transient current measurement system; ultra-fast transient acquisition system; Charge carrier processes; Circuit testing; Conductivity; Current measurement; Diodes; Oscilloscopes; Sampling methods; System testing; Telephony; Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
Type :
conf
DOI :
10.1109/RADECS.2001.1159316
Filename :
1159316
Link To Document :
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