• DocumentCode
    2920067
  • Title

    Recent studies of single-event phenomena in devices using the heavy-ion microbeam at JAERI

  • Author

    Hirao, T. ; Laird, J.S. ; Mori, H. ; Onoda, S. ; Itoh, H.

  • Author_Institution
    JAERI, Gunma, Japan
  • fYear
    2001
  • fDate
    10-14 Sept. 2001
  • Firstpage
    418
  • Lastpage
    422
  • Abstract
    For the study of basic mechanism of single-event upset, we have developed a transient current measurement system comprising a heavy-ion micro-beam combined with an ultra-fast transient acquisition system. Transient current. waveforms induced by high-energy heavy ion strikes in test structures are reported.
  • Keywords
    ion beam effects; radiation hardening (electronics); JAERI heavy-ion microbeam; single-event phenomena; transient current measurement system; ultra-fast transient acquisition system; Charge carrier processes; Circuit testing; Conductivity; Current measurement; Diodes; Oscilloscopes; Sampling methods; System testing; Telephony; Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
  • Print_ISBN
    0-7803-7313-8
  • Type

    conf

  • DOI
    10.1109/RADECS.2001.1159316
  • Filename
    1159316