DocumentCode
2920186
Title
Characterization of power transistors and low voltage logic circuits at high dose and temperature
Author
Le Gac, J.-P. ; Giraud, A. ; Brichard, B. ; Brisset, C. ; Picard, C.
Author_Institution
CEA Saclay, Gif sur Yvette, France
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
455
Lastpage
460
Abstract
Controlled thermonuclear fusion environments require electronic systems that can withstand both high radiation doses and elevated temperatures. This study investigates the response of power transistors and low voltage logic circuits to these two constraints.
Keywords
logic circuits; low-power electronics; power MOSFET; radiation effects; CMOS inverter circuits; controlled thermonuclear fusion environment; high dose effects; high temperature effects; low voltage logic circuits; power MOSFETs; power transistors; Circuit testing; Electronic components; Electronic equipment testing; Fusion reactors; Inductors; Logic circuits; Low voltage; Phase measurement; Power transistors; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159322
Filename
1159322
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