A high performance PIN diode design in 0.25um SiGe HBT process

Author

Cesur, Evren ; Tangel, Ali

Author_Institution

TUBITAK BILGEM UEKAE, Gebze, Turkey

fYear

2013

fDate

28-30 Nov. 2013

Firstpage

398

Lastpage

403

Abstract

In this paper, the physical structure, application areas, and design details of PIN diodes highlighted from the literature are summarized. Moreover, the YITAL 0.25μ SiGe HBT process compatible PIN diode to be used in X-Band transmitter/receiver circuits and monolithic microwave integrated circuit applications is designed using TCAD design tools. Additionally, effects of PIN diode geometry to its performance are also addressed. The anode area of the designed PIN is 16 μm² with square geometry. In addition to above studies, it is suggested to use of guard ring, deep trench isolation, and also a boron implantation under the bottom of each deep trench isolation well due to their positive effects on diode isolation parameters. Some important SPICE parameters are also extracted from the designed PIN diode using the completed DC and AC simulations. The related simulation results and calculations are also given in the paper together with discussions and future works.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; p-i-n diodes; semiconductor materials; AC simulations; DC simulations; SPICE parameters; SiGe; TCAD design tools; X-Band transmitter-receiver circuits; YITAL HBT process; boron implantation; deep trench isolation; diode isolation parameters; guard ring; high performance PIN diode design; monolithic microwave integrated circuit; size 0.25 mum; Anodes; Fabrication; Geometry; Heterojunction bipolar transistors; PIN photodiodes; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering (ELECO), 2013 8th International Conference on

Conference_Location

Bursa

Print_ISBN

978-605-01-0504-9

Type

conf

DOI

10.1109/ELECO.2013.6713870

Filename

6713870