Metamorphic optical receiver components

Author

Whelan, C.S. ; Marsh, P.F. ; Zhang, Ye ; Hoke, W.E. ; Lardizabal, S. ; Hunt, John ; Grigas, M. ; Kazior, Thomas E.

Author_Institution

Raytheon RF Components, Andover, MA, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

420

Abstract

GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs are eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. Metamorphic device technology has now expanded to optical receiver components and shows performance suitable for 40 Gb/s digital and analog optical links.

Keywords

III-V semiconductors; S-parameters; frequency response; gallium arsenide; high electron mobility transistors; integrated optoelectronics; microwave field effect transistors; optical receivers; photodiodes; 40 Gbit/s; GaAs; GaAs based metamorphic HEMT technology; S-parameters; analog optical links; digital optical links; frequency response; lattice-matching buffer; metamorphic optical receiver components; photodiode; strain-induced imperfections; wide bandwidth amplifier; Bandwidth; Diodes; Frequency; Gallium arsenide; Noise figure; Optical amplifiers; Optical receivers; Performance gain; Photodiodes; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159358

Filename

1159358