Gaussian etched single transverse mode vertical-cavity surface-emitting laser

Summary form only given. There is currently much interest in producing robust single transverse mode vertical-cavity surface-emitting lasers, VCSELs, for use in low cost optical data storage applications. Previous work has shown that post-processing of VCSELs using focused ion beam (FIB) etching of the device aperture to depths in the order of a quarter wavelength in the material, can substantially modify the spatial and spectral emission. The devices investigated are GaAs quantum well top-emitting lasers with proton implanted current confinement and circular cavity contact aperture diameters of 13 /spl mu/m.