Title :
Quasi-stationary acoustic charge transport in GaAs structures
Author :
Bugaev, A.S. ; Zakharova, A.A.
fDate :
Oct. 31 1994-Nov. 3 1994
Abstract :
Quasi-stationary charge transport by surface acoustic wave (SAW) in the structures with GaAs active layer is investigated theoretically. The accurate conditions for effective charge transfer by SAW are obtained using the proposed effective potential method. The carrier distribution and the current density in the charge packet are calculated analytically in the two-dimensional region of the structure
Keywords :
III-V semiconductors; acoustic charge transport devices; carrier density; charge-coupled devices; gallium arsenide; surface acoustic wave devices; GaAs; active layer; carrier distribution; charge packet; current density; effective charge transfer; effective potential method; quasi-stationary acoustic charge transport; surface acoustic wave; two-dimensional region; Charge carrier processes; Charge coupled devices; Gallium materials/devices; Surface acoustic wave devices;
Conference_Titel :
Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE
Conference_Location :
Cannes, France
Print_ISBN :
0-7803-2012-3
DOI :
10.1109/ULTSYM.1994.401599
