A preparative technique for spiral thin-film transformer at GHz frequency band

Author

Zheng, Liang ; Qin, Huibin ; Daniels, Stephen

Author_Institution

Nat. Centre for Plasma Sci. & Technol., Dublin City Univ., Dublin, Ireland

fYear

2009

fDate

12-17 July 2009

Firstpage

256

Lastpage

259

Abstract

This paper present a preparative technique for spiral thin-film transformer with ferrite magnetic core. RF magnetron sputtering is used to prepare ferrite thin film on SiO₂ layer. Compatible problems of thin film with IC technology are observed by SEM. The problems are resolved through sputtering parameters modification and heating treatment addition. S-parameters are measured at 10 MHz-20 GHz. The result shows that The experience result shows, magnetic core thin-film transformer with 15:15 ratio-turn can obtain the maximal transmission efficiency 80.9% at 10 MHz-20 GHz, and the air core transformer can obtain the maximal transmission efficiency 55.4% at same frequency range. Ferrite thin film can improve the transmission efficiency evidently.

Keywords

S-parameters; UHF devices; VHF devices; ferrite devices; high-frequency transformers; magnetic microwave devices; magnetic thin film devices; silicon compounds; sputtering; transformer cores; RF magnetron sputtering; S-parameters; SEM; SiO₂; air core transformer; efficiency 55.4 percent; efficiency 80.9 percent; ferrite magnetic core; ferrite thin film; frequency 10 MHz to 20 GHz; heating treatment; maximal transmission efficiency; preparative technique; spiral thin-film transformer; Ferrite films; Heat treatment; Magnetic cores; Magnetic films; Radio frequency; Scattering parameters; Spirals; Sputtering; Transformer cores; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.

Conference_Location

Cork

Print_ISBN

978-1-4244-3733-7

Electronic_ISBN

978-1-4244-3734-4

Type

conf

DOI

10.1109/RME.2009.5201354

Filename

5201354