DocumentCode :
2922155
Title :
Shallow quantum well EAM-LD with short hole lifetime for high-power and long-reach 10Gbps transmitters
Author :
Miyazaki, Y. ; Yamatoya, T. ; Matsumoto, K. ; Aoyagi, T. ; Nishimura, T.
Author_Institution :
High Frequency & Optical Device Works, Mitsubishi Electric Corp., Japan
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
524
Lastpage :
525
Abstract :
Hole lifetime in electroabsorption modulator integrated laser diode (EAM-LD) has been reduced to 7ps by employing a shallow quantum well (QW) absorption layer. 10Gbps-80km SMF transmission has been achieved at +5.3dBm fiber launched power.
Keywords :
chirp; electroabsorption modulator; hole lifetime; laser diode; quantum well; Absorption; Chirp modulation; Diode lasers; Frequency measurement; Optical refraction; Optical transmitters; Optical variables control; Power generation; Quantum well devices; Thermionic emission; chirp; electroabsorption modulator; hole lifetime; laser diode; quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569493
Filename :
1569493
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2922155
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