Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors

Author

Dreyer, Michael L. ; Durec, Jeff

Author_Institution

Motorola Inc., Mesa, AZ, USA

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

95

Lastpage

101

Abstract

The authors report experimental results on the effect of forward current gain (h/sub fe/ degradation on the low-frequency 1/f noise characteristics of polysilicon emitter n-p-n transistors. A direct relationship between progressively increasing levels of h/sub fe/ degradation and changes in the 1/f noise spectra has been observed. Measurement of the base Gummel characteristic and base current dependence of the noise suggests that surface recombination resulting from hot carrier stress degrades h/sub fe/ and is the dominant 1/f noise source.<>

Keywords

BiCMOS integrated circuits; bipolar transistors; hot carriers; random noise; semiconductor device noise; semiconductor device testing; BiCMOS n-p-n transistors; base Gummel characteristic; base current dependence; current gain degradation; hot carrier stress; low-frequency 1/f noise characteristics; polysilicon emitter n-p-n transistors; surface recombination; BiCMOS integrated circuits; Bipolar transistors; Degradation; Electromigration; Frequency; Hot carriers; Low-frequency noise; Noise measurement; Semiconductor device noise; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187630

Filename

187630