Title :
Low frequency 1/f noise and current gain degradation in BiCMOS n-p-n transistors
Author :
Dreyer, Michael L. ; Durec, Jeff
Author_Institution :
Motorola Inc., Mesa, AZ, USA
fDate :
March 31 1992-April 2 1992
Abstract :
The authors report experimental results on the effect of forward current gain (h/sub fe/ degradation on the low-frequency 1/f noise characteristics of polysilicon emitter n-p-n transistors. A direct relationship between progressively increasing levels of h/sub fe/ degradation and changes in the 1/f noise spectra has been observed. Measurement of the base Gummel characteristic and base current dependence of the noise suggests that surface recombination resulting from hot carrier stress degrades h/sub fe/ and is the dominant 1/f noise source.<>
Keywords :
BiCMOS integrated circuits; bipolar transistors; hot carriers; random noise; semiconductor device noise; semiconductor device testing; BiCMOS n-p-n transistors; base Gummel characteristic; base current dependence; current gain degradation; hot carrier stress; low-frequency 1/f noise characteristics; polysilicon emitter n-p-n transistors; surface recombination; BiCMOS integrated circuits; Bipolar transistors; Degradation; Electromigration; Frequency; Hot carriers; Low-frequency noise; Noise measurement; Semiconductor device noise; Stress;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187630
