DocumentCode :
2922476
Title :
The Effect of the Subthreshold Slope Degradation on NBTI Device Characterization
Author :
Brisbin, D. ; Chaparala, P.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
96
Lastpage :
99
Abstract :
For PMOSFET devices NBTI is a serious reliability concern. Because of recovery effects careful stress and measurement methods must be used to determine threshold voltage degradation. These methods assume that mobility and subthreshold slope degradation are minimal. Recent papers have pointed out that this assumption may not be valid. This paper discusses for the first time a unique fast switching NBTI measurement technique that alternates between two VGS measurement conditions to determine the subthreshold slope vs. stress time. From these measurements the effect of subthreshold slope degradation on VT degradation can be accurately determined and results compared to the standard techniques. In, addition, this work also introduces an improved NBTI fast switching test methodology to complement the pending NBTI JEDEC testing standard.
Keywords :
MOSFET; semiconductor device reliability; NBTI JEDEC testing standard; NBTI device characterization; NBTI fast switching test methodology; PMOSFET devices; subthreshold slope degradation; threshold voltage degradation; Degradation; MOSFET circuits; Measurement standards; Measurement techniques; Niobium compounds; Stress measurement; Testing; Threshold voltage; Time measurement; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796095
Filename :
4796095
Link To Document :
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