Title :
Low-Temperature Deposition of Silicon Dioxide and Silicon Nitride for Dual Spacer Application
Author :
Chatham, Hood ; Mogaard, Martin ; Treichel, Helmuth
Author_Institution :
Aviza Technol., Inc., Scotts Valley
Abstract :
Advanced sub 65 nm spacer applications require high quality conformal silicon dioxide and silicon nitride deposition processes at low thermal budgets. In this paper, we report on a study where these films were deposited using a novel Si precursor material that enables high deposition rates at temperatures typically around 250degC using a production-proven single wafer chemical vapor deposition (CVD) system (Planar 300trade) from Aviza Technology. Films are deposited with excellent non-uniformities, step coverage over challenging device structures and low particle counts. The reported silicon dioxide process is a purely thermal CVD process, whereas the silicon nitride process uses an RF plasma to initiate ammonia reactivity. The use of a single platform and single C- and Cl-free Si precursor enables sequential processing of C- and CI- free SiO2 and SiN dual spacer layers at processing temperatures (< 400degC) compatible with advanced devices.
Keywords :
nanotechnology; plasma CVD; silicon compounds; Aviza Technology; RF plasma; SiO2-SiN; ammonia reactivity; dual spacer layers; low-temperature deposition; precursor materials; silicon dioxide deposition; silicon nitride deposition; single wafer chemical vapor deposition; size 65 nm; thermal CVD process; Chemical vapor deposition; Conductive films; Hydrogen; Optical films; Plasma applications; Plasma temperature; Semiconductor films; Silicon compounds; Space technology; Spectroscopy;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMI
Conference_Location :
Stresa
Print_ISBN :
1-4244-0652-8
Electronic_ISBN :
1-4244-0653-6
DOI :
10.1109/ASMC.2007.375087