• DocumentCode
    2923151
  • Title

    Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectrics

  • Author

    Lee, Tackhwi ; Park, S. ; Lee, Jack ; Banerjee, Sanjay K.

  • Author_Institution
    Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    1
  • Lastpage
    16
  • Abstract
    Intrinsic TDDB of the thin bilayered Dy2O3/HfO2 gate oxide has been discussed Physical based breakdown model suggested Defect density extracted by introducing the oxide thinning model The effective activation energy is calculated
  • Keywords
    Dielectric breakdown; Electric breakdown; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Lifting equipment; MOSFET circuits; Microelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    South lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796132
  • Filename
    4796132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923151