DocumentCode :
2923261
Title :
Low temperature wafer bonding for micromechanical applications
Author :
Quenzer, H.J. ; Benecke, W. ; Dell, C.
Author_Institution :
Fraunhofer-Inst. fur Mikrostrukturtechnik, Berlin, Germany
fYear :
1992
fDate :
4-7 Feb 1992
Firstpage :
49
Lastpage :
55
Abstract :
A new class of modified silicon direct bonding processes is presented. The new process step within the bonding procedure involves the use of thin, intermediate layers to decrease the required process temperatures. The bonding process was characterized using oxidized silicon wafers. It was found that very strong bonds at temperatures around 200°C or 350°C can be achieved. Using ammonia-silica solutions, the surface energies achieve values of about 1.6 J/m2 . The lower bonding strength is compensated by offering a full IC-compatible bonding process. The influence of chemical and temperature treatment on the surface energies is described in detail
Keywords :
electric sensing devices; micromechanical devices; packaging; silicon; surface energy; wafer bonding; 200 C; 350 C; IC-compatible bonding process; Si; Si wafers; direct bonding processes; low temperature; micromechanical applications; packaging; sensors; surface energies; wafer bonding; Aluminum; Bonding processes; Boron; Fabrication; Glass; Micromechanical devices; Silicon; Surface treatment; Temperature; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1992, MEMS '92, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robot. IEEE
Conference_Location :
Travemunde
Print_ISBN :
0-7803-0497-7
Type :
conf
DOI :
10.1109/MEMSYS.1992.187689
Filename :
187689
Link To Document :
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