Title :
The THz emission properties of GaAs photoconductive antenna with strong electric fields
Author_Institution :
Sch. of Phys. & Electr. Eng., Weinan Teachers Univ., Weinan, China
Abstract :
The terahertz (THz) emission properties of GaAs photoconductive antennas with strong electric fields are discussed; the transient transport characteristics of non-equilibrium carriers (hot electrons) within the photoconductive antenna were comparatively analyzed. It is shown that there are significant differences in the average drift velocity variation with strong and weak electric field. In the initial phase, optical wave scattering is mainly caused by small-angle scattering, carriers are accelerated by ballistic transport to reach higher electron energy in a shorter time, and the transient drift-velocity quickly rises, which is a main reason of the stronger THz radiation.
Keywords :
III-V semiconductors; antenna radiation patterns; ballistic transport; gallium arsenide; hot carriers; light scattering; photoconducting switches; terahertz wave devices; GaAs; THz emission property; average drift velocity variation; ballistic transport acceleration; electric field; electron energy; hot electron; nonequilibrium carrier; optical wave scattering; photoconductive switch antenna; small-angle scattering; terahertz emission property; transient drift-velocity; transient transport characteristics; Dipole antennas; Electric fields; Electrodes; Gallium arsenide; Optical switches; Semiconductor lasers; Strong Electric field; Terahertz (THz) Radiation; non-equilibrium carriers; photoconductive switches antenna;
Conference_Titel :
Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on
Conference_Location :
Xian
Print_ISBN :
978-1-4673-1799-3
DOI :
10.1109/ISAPE.2012.6408990
